Pepen Arifin, Heri Sutanto, Agus Subagio, Sugianto Sugianto, Muhammad A. Mustajab
The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized using optical emission spectroscopy, and the plasma is dominated by excited molecular nitrogen, which emits in the range 300-420 nm. The emission intensity of the plasma significantly depends on the flow rate of nitrogen gas and heater temperature and are optimally 70 SCCM and 650 °C, respectively. A further increase in these parameters results in a decrease in the intensity of the nitrogen plasma emission. An optimal flow rate and heater temperature are used to grow InGaN thin films on c-sapphire substrates. InGaN thin films grown with a TMIn vapor concentration (xv) of 0%, 50%, and 100% at a growth temperature of 650 °C are highly oriented to the (0002) plane in a hexagonal structure. The film grown with a vapor concentration of 50% has an indium concentration of 55% and no indication of phase separation. Increasing the growth temperature above 650 °C results in a decrease in the growth rate. © 2019 Author(s).
Physics of Electronic Materials Division, Department of Physics, Faculty of Mathematics and Natural Sciences (FMIPA), Institute of Technology Bandung (ITB), Jl. Ganesha 10, Bandung, 40132, Indonesia; Department of Physics, University of Diponegoro, Jl. Prof. Soedharto, SH, Tembalang, Semarang, 50275, Indonesia; Department of Physics, State University of Semarang, Sekaran, Gunungpati, Semarang, 50229, Indonesia
