N.M.D. Putra, Sugianto, B. Astuti, P. Marwoto
It has been successfully grown thin film CdTe, CdTe:Cu (2%) and CdTe:Cu (15%) using DC Magnetron Sputtering method. Sample preparation was performed with different temperature and plasma power parameters above the ITO (Indium Tin Oxide) substrates. Then sample a thin film on annealing for 20 minutes. The addition of Cu doping causes the film polycrystalline structure to change from zincblende (cubic) to wurtzite (hexagonal) crystal phase. The optical transformation of CdTe as absorber is indicated parameter by the Eg = 1.48 eV or α = 7,348×104 cm-1 corresponding to the CdTe:Cu (2%) thin film sample with optimum crystal size and high lattice parameters. © Published under licence by IOP Publishing Ltd.
Physics Department, Universitas Negeri Semarang, Sekaran-Gunungpati, Semarang, 50229, Indonesia
