E. Wibowo, N. Ulya, Z. Othaman, P. Marwoto, I. Sumpono, M.P. Aji, Sulhadi, B. Astuti, M. Rokhmat, Suwandi, A. Ismardi, Sutisna
We have grown the InxGal-xAs NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), while kinks NWs were perceived on Si(lll). We found that the growth direction of the InxGal-xAs NWs can be easily controlled using certain orientation of the substrate by considering its lattice mismatch and its surface energy. © Published under licence by IOP Publishing Ltd.
Engineering Physics, School of Electrical Engineering, Telkom University, Jalan Telekomunikasi No.1, Bandung, Terusan Buah Batu, Indonesia; Department of Physics, Faculty of Sciences, Universiti Teknologi Malaysia (UTM), Johor Bahru, Skudai, Malaysia; Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang (UNNES), Gunungpati, Semarang, Indonesia; Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Jember, East Java, Indonesia
