Iping Suhariadi, Yudi Rahmawan, Teguh Darsono, Zainovia Lockman
CuAlO2 thin film was successfully produced by chemical solution deposition process via ultrasonic spray pyrolysis (USP) technique on n-type Si substrate using nitrate as precursors. The effects of deposition temperature on structural, optical and electrical properties were investigated. The Scanning Electron Microscope (SEM) micrograph showed that the morphological feature of the film is highly influenced by the deposition temperature. The XRD characterization revealed that the produced CuAlO2 film has c-axis crystal orientation. The film showed high rectifying nature of diode in a junction of p-type CuAlO2/n-type Si with turn on voltage approximately 0.5 V. The highest current density of J = 0.86 mAcm−2 at forward bias of 5 V was observed for the film deposited at 600 °C. © 2019 Elsevier B.V.
School of Computer Science, Bina Nusantara University, Jakarta, 11480, Indonesia; Department of Mechanical Engineering, Universitas Pertamina, Jakarta, 12220, Indonesia; Department of Physics, Universitas Negeri Semarang, Semarang, 50229, Indonesia; Green Electronics NanoMaterials Group, School of Materials and Mineral Resources, Universiti Sains Malaysia, Penang, 14300, Malaysia
