B. Astuti, Sugianto, S.N. Mahmudah, R. Zannah, N.M.D. Putra, P. Marwoto, D. Aryanto, E. Wibowo
ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at plasma power, deposition temperature and deposition time are 40 watt, 400°C and 2 hours, respectivelly. Furthermore, for annealing process has been done on the variation of oxygen pressure are 0, 50, and 100 mTorr. X-ray diffraction (XRD), and SEM was used to characterize ZnO:Al thin film was obtained. Based on XRD characterization results of the ZnO:Al thin film shows that deposited thin film has a hexagonal structure with the dominant diffraction peak at according to the orientation of the (002) plane and (101). Finally, the crystal structure of the ZnO:Al thin films that improves with an increasing the oxygen pressure at annealing process up to 100 mTorr and its revealed by narrow FWHM value and also with dense crystal structure. © Published under licence by IOP Publishing Ltd.
Physics Departement, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang, Indonesia; Research Center for Physics, Indonesian Institute of Sciences, Indonesia; Engineering Physics, School of Electrical Engineering, Telkom University, Indonesia
