Tijjani Adam, U. Hashim, Sutikno, Th.S. Dhahi, T. Nazwaa
The technology development for nano structure formation using standard CMOS process-based method capable of fabricating precisely control nano wire and Nanogap formation were demonstrated. The fabrication of nanoscale patterns with dimensions of 50 nm or less has been the goal of many researchers for potential applications as various sensing element, using improved Photolithography coupled with plasma oxidation and by simultaneous application of reactive ion etcher and oxidation furnace, step wise patterning and oxidation was introduced for size expansion and trimming nanogap and Nanowire fabrication from micro sizes down to nano sizes <30nm. To demonstrate the quality of the fabricated nanogap, the fabricated structure is optically and electrically characterized with a field emission scanning electron microscope (FESEM) and dielectric analyzer (DA). To characterized the fabricated nanogap, an electrical characterization of the structures by dielectric analyzer (DA) shows an enhanced permittivity and capacity with the reduction of gap size, and Nano wire of lowest dimension of 1.5 nm was obtained with improved conductivity, suggesting the potential of the fabricated devices for applications in sensitive and selective detection of biomolecules with very low level of power supply. © 2012 Elsevier B.V.
Nano Structure Lab, Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis, Malaysia; Physics Department, Faculty of Science, Semarang State University, Indonesia
