D. Gustiono, E. Wibowo, Z. Othaman
Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of in dimension and composition of chemical elements. We synthesized InGaAs nanowire on GaAs (111) substrate at 400 °C-480 °C temperatures for 30 minutes using MOCVD. The nanowires grow perpendicular to the substrate via direct impinging mechanism and they have hexagonal shape with diameter of 80-150 nm. Dimension of nanowire, length and diameter, increase with increases of growth temperature. Formations of tapering could be controlled with growth at lower temperature. © IOP Publishing Ltd 2013.
Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia; Agency for Assessment and Application of Technology, BPPT Second Building, Jakarta 10340, Indonesia; Department of Physics, Faculty of Mathematic and Science, Universitas Negeri Semarang, Semarang, Indonesia
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