Budi Astuti, Masahiro Tanikawa, Shaharin Fadzli Abd Rahman, Kanji Yasui, Abdul Manaf Hashim
We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities. © 2012 by the authors.
Ibnu Sina Institute for Fundamental Science Studies, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia; Department of Physics, Faculty of Mathematics and Nature Science, Semarang State University, Semarang, Jawa Tengah 50229, Indonesia; Department of Electrical Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 9402136, Japan; Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, Kuala Lumpur 54100, Malaysia
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