Edy Wibowo, Zulkafli Othaman, Samsudi Sakrani, Imam Sumpono
Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of In xGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition. © 2011 World Scientific Publishing Company.
Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia; Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia; Department of Physics, Faculty of Mathematic and Science, Universitas Negeri Semarang, Semarang, Indonesia
