P. Arifin, Sugianto, E. Suprianto, N. Wendri, H. Sutanto, M. Budiman, M. Barmawi
Thin films AlxGa1-xN were grown on (0001) sapphire substrates by Plasma Assisted Metal-organic Chemical Vapor Deposition (PA-MOCVD). Plasma-cracked N2, trimethylaluminum (TMA1) and trimethylgallium (TMGa) were used as nitrogen, aluminum and gallium sources, respectively. The results of Energy Dispersive X-ray (EDX) measurements performed at room temperature yielded the linear dependence of molar fraction of Al (x) on moiar fraction of vapor phase of TMA1/(TMA1 + TMGa). The dependence of the band gap energy on the molar fraction of Al (x) showed quadratic expression, Eg (x)= 3.35 + 1.55x + 1.3 x2 eV. AlxGa1-xN layers with x < 0.34 show n-type conduction with room temperature mobilities in the range of 5 to 10 cm2/V.s, and electron concentrations of 9.0 × 1016 to 1.4 × 1019cm-3. © 2002 IEEE.
Laboratory of Electronic Material Physics, Department of Physics, ITB, Bandung, 40132, Indonesia; Department of Physics, State University of Semarang, Indonesia; Department of Physics, University of Jember, Indonesia; Department of Physics, University of Udayana, Indonesia; Department of Physics, University of Diponegoro, Indonesia
